According to the recent study the RF GaN semiconductor device market is projected to grow at a CAGR of 21%-23% from 2020 to 2025. Growth in this market is primarily driven by increase in demand for gallium nitride in automotive and consumer electronics, the success of gallium nitride in RF power electronics, and wide bandgap property of gallium nitride material encouraging innovative applications.
Browse XX figures / charts and XX tables in this 150-page report
to understand trends, opportunities and forecast in RF GaN semiconductor device
market by material (GaN-On-SiC, GaN-On-Silicon, GaN-On-Diamond), application
(wireless infrastructure, power storage, satellite communication, PV inverter,
and others), end use industry (aerospace and defense, IT and telecom, consumer
electronics, automotive, and others), and region (North America, Europe, Asia Pacific,
and Rest of the World).
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and view detailed Table of Content by clicking on below link https://www.lucintel.com/rf-gan-semiconductor-device-market.aspx
“Wireless infrastructure market is expected to remain the highest
growth segment during the forecast period.”
Based on application,
the RF GaN semiconductor device market is segmented into wireless
infrastructure, power storage, satellite communication, PV inverter, and others.
Lucintel forecasts that the wireless infrastructure market is expected to
remain the highest growth over the forecast period due to increasing
technological advancements in 5G infrastructure networks, growing adoption of
4G and 5G mobile devices, and rising implementation of RF GaN solutions in
wireless infrastructure applications such as in radio, MRI machines, radar,
television broadcasting, and others.
“Asia Pacific will dominate the RF GaN semiconductor device market
in near future.”
Asia Pacific is expected
to be the largest region over the forecast period and it is also expected to
witness the highest growth over the forecast period due to the growing market
for telecommunication and the electronics industry across the region.
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Major players of RF GaN
semiconductor device market are adopting various growth strategies like new product
launches, expansions, merger and acquisitions, partnerships, agreements, and
collaborations to expand their presence in this market. Cree, Hitachi,
Infineon, Mitsubishi, Panasonic, STMicroelectronics, Sumitomo, and Toshiba is
among the major RF GaN semiconductor device providers.
This unique research
report will enable you to make confident business decisions in this globally
competitive marketplace. For a detailed table of contents, contact Lucintel at
+1-972-636-5056 or click on this link https://www.lucintel.com/rf-gan-semiconductor-device-market.aspx or helpdesk@lucintel.com.
About Lucintel
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solutions for you growth through game changer ideas and robust market &
unmet needs analysis. We are based in
Dallas, TX and have been a trusted advisor for 1,000+ clients for over 20
years. We are quoted in several publications like the Wall Street Journal,
ZACKS, and the Financial Times. For further information, visit www.lucintel.com.
Contact:
Brandon Fitzgerald
Lucintel
Dallas, Texas, USA
Email: brandon.fitzgerald@lucintel.com
Tel. 972.636.5056
Cell: 303.775.0751
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